15 results
Practical Measurement of X-ray Detection Performance of Large-Angle Silicon Drift Detectors Toward Quantitative Analysis in the Newly Developed 300 kV Aberration-Corrected Grand ARM
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- Journal:
- Microscopy and Microanalysis / Volume 21 / Issue S3 / August 2015
- Published online by Cambridge University Press:
- 23 September 2015, pp. 1223-1224
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- August 2015
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1MeV electron irradiation effects of GaAs/Si solar cells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 836 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, L6.7
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- 2004
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RF Magnetron Sputtering Process for (Ba,Sr)TiO3 Thin Films with Higher Dielectric Constant
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- Journal:
- MRS Online Proceedings Library Archive / Volume 784 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C7.8
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- 2003
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Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1101
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- 1997
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Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 1191
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- 1996
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Giant Magnetoresistance and Soft Magnetic Properties of NiFeCo/Cu Multilayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 313 / 1993
- Published online by Cambridge University Press:
- 03 September 2012, 271
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- 1993
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GaAs / AlGaAs SQW Optical Switch on Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 363
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- 1992
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Initial Stage of Heteroepitaxial Growth of Compound Semiconductor on Si Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 221 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 155
- Print publication:
- 1991
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Room-Temperature CW Operation of SQW Lasers on Si Grown with AiGaAs/AlGaP Intermediate Layers by MoCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 228 / 1991
- Published online by Cambridge University Press:
- 21 February 2011, 189
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- 1991
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Tem Characterization of Dislocations in GaAs-ON-Si Heterostructures Wite Sjpereatlice Intermediate Iayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 198 / 1990
- Published online by Cambridge University Press:
- 28 February 2011, 201
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- 1990
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Effects of Growth Temperature on MOCVD-Grown GaAs-ON-Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 235
- Print publication:
- 1989
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Evaluation of Anti-Phase-Boundaries in GaAs/Si Heterostructures by Transmission Electron Microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 267
- Print publication:
- 1989
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Correlation Between Crystallinity and Schottky Diode Characteristics of GaAs Grown on Siby MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 273
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- 1989
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Growth of Gaas on Si Using Algap Intermediate Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 247
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- 1989
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High Quality GaP Growth on Si Substrates By Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 116 / 1988
- Published online by Cambridge University Press:
- 28 February 2011, 319
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- 1988
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